Discrete Semiconductor Products

SQJ860EP-T1_GE3

Active

MOSFET N-CH 40V 60A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 40V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ860EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	48 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Grade	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Qualification	Power Dissipation (Max)	Package / Case
Vishay General Semiconductor - Diodes Division SQJ860EP-T1_GE3	PowerPAK® SO-8	40 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	N-Channel	Surface Mount	4.5 V 10 V	20 V	55 nC	Automotive	2.5 V	6 mOhm	60 A	AEC-Q101	48 W	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources