Discrete Semiconductor Products

SQ4284EY-T1_BE3

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MOSFET 2N-CH 40V 8A 8SOIC

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SQ4284EY-T1_BE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	45 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	3.9 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	13.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Grade	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power - Max [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Configuration	Technology
Vishay General Semiconductor - Diodes Division SQ4284EY-T1_BE3	8-SOIC	13.5 mOhm	Automotive	45 nC	Surface Mount	3.9 W	2.5 V	40 V	8-SOIC	3.9 mm	0.154 in	-55 °C	175 ░C	8 A	2200 pF	AEC-Q101	2 N-Channel (Dual)	MOSFET (Metal Oxide)

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General part information

Mosfet Array 40V 8A (Tc) 3.9W (Tc) Surface Mount 8-SOIC

Technical documentation and resources