Discrete Semiconductor Products

2N5010

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NPN SILICON TRANSISTOR

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Discrete Semiconductor Products

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NPN SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	2N5010

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-205AA, TO-5-3 Metal Can
Power - Max [Max]	1 W
Supplier Device Package	TO-5AA
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	500 V

Part	Power - Max [Max]	Supplier Device Package	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]
Microsemi Corporation 2N5010	1 W	TO-5AA	Through Hole	30	200 °C	-65 °C	10 nA	NPN	TO-205AA TO-5-3 Metal Can	500 V	1.4 V	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 500 V 200 mA 1 W Through Hole TO-5AA

Technical documentation and resources

No documents available