Discrete Semiconductor Products

MCT08P10Y-TP

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P-CHANNEL MOSFET,SOT-223

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Discrete Semiconductor Products

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P-CHANNEL MOSFET,SOT-223

Technical Specifications

Parameters and characteristics for this part

Specification	MCT08P10Y-TP

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	2.2 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [x]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Supplier Device Package	Mounting Type	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
Micro Commercial Components MCT08P10Y-TP	110 mOhm	8 A	2.5 V	20 nC	-55 °C	150 °C	100 V	MOSFET (Metal Oxide)	1050 pF	P-Channel	SOT-223	Surface Mount	20 V	TO-261-4 TO-261AA	4.5 V 10 V	2.2 W

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General part information

P-Channel 100 V 8A 2.2W Surface Mount SOT-223

Technical documentation and resources