Discrete Semiconductor Products

PJQ4460AP_R2_00001

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60V N-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

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60V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ4460AP_R2_00001

Current - Continuous Drain (Id) @ 25°C	11 A
Current - Continuous Drain (Id) @ 25°C	3.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC
Input Capacitance (Ciss) (Max) @ Vds	509 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2 W, 20 W
Rds On (Max) @ Id, Vgs	72 mOhm
Supplier Device Package	DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Grade	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Panjit International Inc. PJQ4460AP-AU_R2_000A1	8-PowerVDFN	DFN3333-8	11 A	3.7 A	2.4 W 23.8 W	4.5 V 10 V	AEC-Q101	509 pF	MOSFET (Metal Oxide)	2.5 V	Automotive	Surface Mount	175 °C	-55 °C	20 V	N-Channel	60 V	72 mOhm	9.3 nC
Panjit International Inc. PJQ4460AP_R2_00001	8-PowerVDFN	DFN3333-8	11 A	3.7 A	2 W 20 W	4.5 V 10 V		509 pF	MOSFET (Metal Oxide)	2.5 V		Surface Mount	150 °C	-55 °C	20 V	N-Channel	60 V	72 mOhm	9.3 nC

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General part information

N-Channel 60 V 3.7A (Ta), 11A (Tc) 2W (Ta), 20W (Tc) Surface Mount DFN3333-8

Technical documentation and resources