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Technical Specifications
Parameters and characteristics for this part
| Specification | MOC223R2VM |
|---|---|
| Current - DC Forward (If) (Max) [Max] | 60 mA |
| Current - Output / Channel | 150 mA |
| Current Transfer Ratio (Min) [Min] | 500 % |
| Input Type | DC |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Operating Temperature [Max] | 100 °C |
| Operating Temperature [Min] | -40 °C |
| Output Type | Darlington with Base |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 8 µs |
| Rise / Fall Time (Typ) [custom] | 110 µs |
| Supplier Device Package | 8-SOIC |
| Turn On / Turn Off Time (Typ) | 10 µs, 125 µs |
| Vce Saturation (Max) [Max] | 1 V |
| Voltage - Forward (Vf) (Typ) | 1.08 V |
| Voltage - Isolation | 2500 Vrms |
| Voltage - Output (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MOC223M Series
The MOC223M consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic siliconphotodarlington detector, in a surface mountable, small outline, plastic package. The MOCD223M is a dual-channel version of the MOC223M. They are ideallysuited for high density applications, and eliminates the need for through the board mounting.
Documents
Technical documentation and resources
No documents available