Discrete Semiconductor Products

AON7428

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MOSFET N-CH 30V 34A/50A 8DFN

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Discrete Semiconductor Products

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MOSFET N-CH 30V 34A/50A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AON7428

Current - Continuous Drain (Id) @ 25°C	50 A, 34 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Input Capacitance (Ciss) (Max) @ Vds	3120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	83 W, 6.2 W
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	8-DFN-EP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Alpha & Omega Semiconductor Inc. AON7422GS
Alpha & Omega Semiconductor Inc. AON7422E	N-Channel	30 V	4.3 mOhm	2.4 V	50 nC	MOSFET (Metal Oxide)	150 °C	-55 °C	3.1 W	36 W	Surface Mount	8-DFN-EP (3x3)	20 V	20 A 40 A	4.5 V 10 V	8-PowerVDFN
Alpha & Omega Semiconductor Inc. AON7428	N-Channel	30 V	2.8 mOhm	2.3 V	60 nC	MOSFET (Metal Oxide)	150 °C	-55 °C	6.2 W 83 W		Surface Mount	8-DFN-EP (3.3x3.3)	20 V	34 A 50 A	4.5 V 10 V	8-PowerWDFN	3120 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 34A (Ta), 50A (Tc) 6.2W (Ta), 83W (Tc) Surface Mount 8-DFN-EP (3.3x3.3)

Technical documentation and resources