Discrete Semiconductor Products

FPN530A

Obsolete

TRANS NPN 30V 3A TO226

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 30V 3A TO226

Technical Specifications

Parameters and characteristics for this part

Specification	FPN530A

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	1 W
Supplier Device Package	TO-226
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Current - Collector (Ic) (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor FPN560A	3 A	NPN	100 nA	TO-226-3 TO-92-3 Long Body	60 V	TO-226	-55 °C	150 °C	300 mV	1 W	75 MHz	250	Through Hole
ON Semiconductor FPN530A	3 A	NPN	100 nA	TO-226-3 TO-92-3 Long Body		TO-226	-55 °C	150 °C	250 mV	1 W	150 MHz	250	Through Hole	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 30 V 3 A 150MHz 1 W Through Hole TO-226

Technical documentation and resources