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HIP2211EVAL2Z

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Renesas Electronics Corporation

HIP2211 8 LD SOIC EVAL BOARD

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Development Boards, Kits, Programmers

HIP2211EVAL2Z

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Renesas Electronics Corporation

HIP2211 8 LD SOIC EVAL BOARD

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	HIP2211EVAL2Z

Contents	Board(s)
Function	Gate Driver
Supplied Contents	Board(s)
Type	Power Management
Utilized IC / Part	HIP2211

HIP2211 Series

100V, 3A Source, 4A Sink, High Frequency Half-Bridge Drivers with HI/LI Input

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Type	Supplier Device Package	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Channel Type	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Input Type	Package / Case	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case [y]	Package / Case [x]	Type	Supplied Contents	Contents	Utilized IC / Part	Function
Renesas Electronics Corporation HIP2211FRTZ-T7A	Surface Mount	-40 °C	125 ¯C	MOSFET (N-Channel) N-Channel MOSFET	10-TDFN (4x4)	3 A	4 A	Synchronous	115 V	Half-Bridge	2	18 V	6 V	1.47 V	1.84 V	Non-Inverting	10-WDFN Exposed Pad
Renesas Electronics Corporation HIP2211FR8Z-T7A	Surface Mount	-40 °C	125 ¯C	N-Channel MOSFET	8-DFN (4x4)	3 A	4 A	Independent	115 V	Half-Bridge	2	18 V	6 V	1.47 V	1.84 V	Non-Inverting	8-VDFN Exposed Pad	20 ns	20 ns
Renesas Electronics Corporation HIP2211FBZ-T7A	Surface Mount	-40 °C	125 ¯C	N-Channel MOSFET	8-SOIC	3 A	4 A	Synchronous	115 V	Half-Bridge	2	18 V	6 V	1.47 V	1.84 V	Non-Inverting	8-SOIC			3.9 mm	0.154 in
Renesas Electronics Corporation HIP2211FBZ-T	Surface Mount	-40 °C	125 ¯C	N-Channel MOSFET	8-SOIC	3 A	4 A	Independent	115 V	Half-Bridge	2	18 V	6 V	1.47 V	1.84 V	Non-Inverting	8-SOIC	20 ns	20 ns	3.9 mm	0.154 in
Renesas Electronics Corporation HIP2211EVAL2Z																						Power Management	Board(s)	Board(s)	HIP2211	Gate Driver

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Box	1	$ 63.40

Description

General part information

HIP2211 Series

The HIP2211 is a 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver. The HIP2211 features standard HI/LI inputs and is pin-compatible with popular Renesas bridge drivers such as the HIP2101 and ISL2111. Its wide operating supply range of 6V to 18V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.

This driver features a strong 3A source, 4A sink driver with very fast 15ns typical propagation delay and 2ns typical delay matching, making it optimal for high-frequency switching applications. VDD and boot UVLO protects against an undervoltage operation.

The HIP2211 is offered in 8 Ld SOIC, 8 Ld 4x4mm DFN, and 10 Ld 4x4mm TDFN packages.

Documents

Technical documentation and resources