Discrete Semiconductor Products

UG58GHA0G

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DIODE GEN PURP 600V 5A DO201AD

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 5A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	UG58GHA0G

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	30 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Qualification	AEC-Q101
Reverse Recovery Time (trr)	20 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Technology	Supplier Device Package	Package / Case	Reverse Recovery Time (trr)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Reverse Leakage @ Vr	Grade	Qualification
Taiwan Semiconductor Corporation UG58G	600 V	200 mA 500 ns	Standard	DO-201AD	DO-201AD Axial	20 ns	-55 °C	150 °C	5 A	2.1 V	Through Hole	30 µA
Taiwan Semiconductor Corporation UG58GHA0G	600 V	200 mA 500 ns	Standard	DO-201AD	DO-201AD Axial	20 ns	-55 °C	150 °C	5 A	2.1 V	Through Hole	30 µA	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 600 V 5A Through Hole DO-201AD

Technical documentation and resources