Discrete Semiconductor Products

PMXB40UNEZ

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MOSFET N-CH 12V 3.2A DFN1010D-3

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Discrete Semiconductor Products

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MOSFET N-CH 12V 3.2A DFN1010D-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMXB40UNEZ

Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.6 nC
Input Capacitance (Ciss) (Max) @ Vds	556 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XDFN Exposed Pad
Power Dissipation (Max)	8.33 W, 400 mW
Supplier Device Package	DFN1010D-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type
Freescale Semiconductor - NXP PMXB40UNEZ	8 V	8.33 W 400 mW	12 V	N-Channel	1.2 V 4.5 V	3.2 A	3-XDFN Exposed Pad	MOSFET (Metal Oxide)	DFN1010D-3	11.6 nC	-55 °C	150 °C	556 pF	900 mV	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 12 V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

Technical documentation and resources