MIP25R12E1TN-BP

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IGBT MODULES 1200V 25A, E1

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Discrete Semiconductor Products

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IGBT MODULES 1200V 25A, E1

Technical Specifications

Parameters and characteristics for this part

Specification	MIP25R12E1TN-BP

Configuration	Three Phase Inverter
Current - Collector (Ic) (Max) [Max]	25 A
Current - Collector Cutoff (Max) [Max]	1 mA
Input	Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce	1.45 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	166 W
Supplier Device Package	E1
Vce(on) (Max) @ Vge, Ic	2.25 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	NTC Thermistor	Mounting Type	Vce(on) (Max) @ Vge, Ic	Input	Package / Case	Supplier Device Package	Configuration	Input Capacitance (Cies) @ Vce	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]
Micro Commercial Components MIP25R12E1TN-BP		Chassis Mount	2.25 V	Three Phase Bridge Rectifier	Module	E1	Three Phase Inverter	1.45 nF	25 A	1200 V	150 °C	-40 °C	166 W	1 mA

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General part information

IGBT Module Three Phase Inverter 1200 V 25 A 166 W Chassis Mount E1

Technical documentation and resources