Discrete Semiconductor Products

HUF76113DK8T

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MOSFET 2N-CH 30V 6A US8

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Discrete Semiconductor Products

Active

MOSFET 2N-CH 30V 6A US8

Technical Specifications

Parameters and characteristics for this part

Specification	HUF76113DK8T

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	19.2 nC
Input Capacitance (Ciss) (Max) @ Vds	605 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-VFSOP
Package / Case [y]	2.3 mm
Package / Case [y]	0.091 in
Power - Max [Max]	2.5 W
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	US8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	FET Feature	Package / Case [y]	Package / Case	Package / Case [y]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Configuration	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]
ON Semiconductor HUF76113DK8T	605 pF	19.2 nC	32 mOhm	US8	MOSFET (Metal Oxide)	Logic Level Gate	2.3 mm	8-VFSOP	0.091 in	-55 °C	150 °C	3 V	30 V	Surface Mount	2 N-Channel (Dual)	6 A	2.5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	592	$ 0.51

General part information

Mosfet Array 30V 6A (Ta) 2.5W (Ta) Surface Mount US8

Technical documentation and resources

No documents available