Discrete Semiconductor Products

TK60D08J1(Q)

Obsolete

MOSFET N-CH 75V 60A TO220

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 75V 60A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TK60D08J1(Q)

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	86 nC
Input Capacitance (Ciss) (Max) @ Vds	5450 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	140 W
Rds On (Max) @ Id, Vgs	7.8 mOhm
Supplier Device Package	TO-220(W)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Operating Temperature	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage TK60D08J1(Q)	60 A	TO-220(W)	TO-220-3	MOSFET (Metal Oxide)	2.3 V	5450 pF	20 V	Through Hole	7.8 mOhm	140 W	75 V	150 °C	N-Channel	4.5 V 10 V	86 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 75 V 60A (Ta) 140W (Tc) Through Hole TO-220(W)

Technical documentation and resources