Discrete Semiconductor Products

PMBD914,235

Active

DIODE GP 100V 215MA TO236AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GP 100V 215MA TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMBD914,235

Capacitance @ Vr, F	1.5 pF
Current - Average Rectified (Io)	215 mA
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-236AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Operating Temperature - Junction	Package / Case	Current - Average Rectified (Io)	Capacitance @ Vr, F	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Speed	Grade	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package	Qualification	Reverse Recovery Time (trr)
Freescale Semiconductor - NXP PMBD914-QR	175 °C	SC-59 SOT-23-3 TO-236-3	215 mA	1.5 pF	Surface Mount	100 V	Standard	200 mA 500 ns	Automotive	1 µA	1.25 V	TO-236AB	AEC-Q101	4 ns
Freescale Semiconductor - NXP PMBD914,235	150 °C	SC-59 SOT-23-3 TO-236-3	215 mA	1.5 pF	Surface Mount	100 V	Standard	200 mA 500 ns		1 µA	1.25 V	TO-236AB		4 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 215mA Surface Mount TO-236AB

Technical documentation and resources