Discrete Semiconductor Products

SIHK075N60EF-T1GE3

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E SERIES POWER MOSFET WITH FAST

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Discrete Semiconductor Products

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E SERIES POWER MOSFET WITH FAST

Technical Specifications

Parameters and characteristics for this part

Specification	SIHK075N60EF-T1GE3

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds	2954 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerBSFN
Power Dissipation (Max)	192 W
Rds On (Max) @ Id, Vgs [Max]	71 mOhm
Supplier Device Package	PowerPAK®10 x 12
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Technology
Vishay General Semiconductor - Diodes Division SIHK075N60EF-T1GE3	Surface Mount	2954 pF	72 nC	N-Channel	33 A	10 V	8-PowerBSFN	5 V	30 V	-55 °C	150 °C	PowerPAK®10 x 12	600 V	71 mOhm	192 W	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 33A (Tc) 192W (Tc) Surface Mount PowerPAK®10 x 12

Technical documentation and resources