Discrete Semiconductor Products

2SJ358-T1-AZ

Obsolete

2SJ358-T1-AZ - P-CHANNEL MOS FET

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Discrete Semiconductor Products

Obsolete

2SJ358-T1-AZ - P-CHANNEL MOS FET

Technical Specifications

Parameters and characteristics for this part

Specification	2SJ358-T1-AZ

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	23.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs [Max]	300 mOhm
Supplier Device Package	MP-2
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	2 V

Power MOSFETs for Automotive

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Package / Case	FET Type	Mounting Type	Operating Temperature	Vgs (Max) [Max]	Vgs (Max) [Min]	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Renesas Electronics Corporation 2SJ358-T1-AZ	MP-2	600 pF	3 A	4 V	10 V	2 W	23.9 nC	MOSFET (Metal Oxide)	TO-243AA	P-Channel	Surface Mount	150 °C	10 V	-20 V	300 mOhm	60 V	2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2550	$ 1.23

General part information

Power MOSFETs for Automotive

Technical documentation and resources