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Technical Specifications
Parameters and characteristics for this part
| Specification | RQ6E045BNTCR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 330 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Power Dissipation (Max) [Max] | 1.25 W |
| Rds On (Max) @ Id, Vgs | 30 mOhm |
| Supplier Device Package | TSMT6 (SC-95) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RQ6E045BN Series
Power MOSFET RQ6E045BN is suitable for switching power supply.
Documents
Technical documentation and resources