Discrete Semiconductor Products

PSMN009-100P,127

Obsolete

MOSFET N-CH 100V 75A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 75A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN009-100P,127

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	156 nC
Input Capacitance (Ciss) (Max) @ Vds	8250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	8.8 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type
Freescale Semiconductor - NXP PSMN009-100P,127	20 V	100 V	MOSFET (Metal Oxide)	TO-220-3	-55 °C	175 ░C	8.8 mOhm	8250 pF	156 nC	75 A	230 W	TO-220AB	10 V	N-Channel	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 75A (Tc) 230W (Tc) Through Hole TO-220AB

Technical documentation and resources