Discrete Semiconductor Products

BUK7Y2R0-40HX

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BUK7Y2R0-40H - N-CHANNEL 40 V, 2.0 MΩ STANDARD LEVEL MOSFET IN LFPAK56@EN-US SOIC 4-PIN

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Discrete Semiconductor Products

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BUK7Y2R0-40H - N-CHANNEL 40 V, 2.0 MΩ STANDARD LEVEL MOSFET IN LFPAK56@EN-US SOIC 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y2R0-40HX

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	5450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	217 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	3.6 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Grade	Package / Case	Power Dissipation (Max)	Supplier Device Package
Freescale Semiconductor - NXP BUK7Y2R0-40HX	-55 °C	175 ░C	AEC-Q101	90.5 nC	MOSFET (Metal Oxide)	120 A	20 V	-10 V	10 V	40 V	Surface Mount	N-Channel	2 mOhm	5450 pF	3.6 V	Automotive	SC-100 SOT-669	217 W	LFPAK56 Power-SO8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 120A (Tc) 217W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources