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BAT754S-QR
Discrete Semiconductor Products

BAT754S-QR

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Nexperia USA Inc.

DUAL SCHOTTKY BARRIER DIODE

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BAT754S-QR
Discrete Semiconductor Products

BAT754S-QR

Active
Nexperia USA Inc.

DUAL SCHOTTKY BARRIER DIODE

Technical Specifications

Parameters and characteristics for this part

SpecificationBAT754S-QR
Current - Average Rectified (Io) (per Diode)200 mA
Current - Reverse Leakage @ Vr2 çA
Diode Configuration1 Pair Series Connection
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction125 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
QualificationAEC-Q101
Speed200 mA
SpeedAny Speed
Supplier Device PackageTO-236AB
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.11

Description

General part information

BAT754S-Q Series

Planar dual Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package.