Discrete Semiconductor Products

NDP7050

Obsolete

MOSFET N-CH 50V 75A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 50V 75A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	NDP7050

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	115 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Power Dissipation (Max)	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor NDP7050L	Through Hole	4000 pF	175 ░C	-65 °C	N-Channel	150 W	20 V	2 V	75 A	115 nC	MOSFET (Metal Oxide)	5 V	15 mOhm	TO-220-3	TO-220-3	50 V
ON Semiconductor NDP7050	Through Hole		175 ░C	-65 °C	N-Channel	150 W	20 V	4 V	75 A	115 nC	MOSFET (Metal Oxide)	10 V	13 mOhm	TO-220-3	TO-220-3	50 V	3600 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 50 V 75A (Tc) 150W (Tc) Through Hole TO-220-3

Technical documentation and resources