Specification	SSM6N68NU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	1.8 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	1.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	129 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	84 mOhm
Supplier Device Package	6-µDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

SSM6N68NU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 4.0 A, 0.084 Ω@4.5V, SOT-1118(UDFN6)

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	FET Feature	FET Feature	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max [Max]	Operating Temperature	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]
Toshiba Semiconductor and Storage SSM6N68NU,LF	30 V	1 V	6-µDFN (2x2)	1.8 V	Logic Level Gate	84 mOhm	1.8 nC	2 N-Channel (Dual)	2 W	150 °C	MOSFET (Metal Oxide)	Surface Mount	4 A	129 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 4.0 A, 0.084 Ω@4.5V, SOT-1118(UDFN6)

Technical documentation and resources