Discrete Semiconductor Products

SICPT20120Y-BP

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DIODE SIL CARB 1200V 20A TO247AD

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Discrete Semiconductor Products

Active

DIODE SIL CARB 1200V 20A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	SICPT20120Y-BP

Capacitance @ Vr, F	1552 pF
Current - Reverse Leakage @ Vr	25 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247AD
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.55 V

Part	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Reverse Recovery Time (trr)	Technology	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Mounting Type
MCC (Micro Commercial Components) SICPT20120Y-BP	1552 pF	175 ░C	-55 °C	1.55 V	1.2 kV	500 mA	0 ns	SiC (Silicon Carbide) Schottky	TO-247-2	TO-247AD	25 µA	Through Hole
MCC (Micro Commercial Components) SICPT20120Y-BP	1552 pF	175 ░C	-55 °C	1.55 V	1.2 kV	500 mA	0 ns	SiC (Silicon Carbide) Schottky	TO-247-2	TO-247AD	25 µA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 20A Through Hole TO-247AD

Technical documentation and resources