Discrete Semiconductor Products
DMC3400SDW-13
ActiveDiodes Inc
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.65A I(D), 30V, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,
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Discrete Semiconductor Products
DMC3400SDW-13
ActiveDiodes Inc
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.65A I(D), 30V, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,
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Technical Specifications
Parameters and characteristics for this part
| Specification | DMC3400SDW-13 |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 650 mA, 450 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 1.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 55 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 310 mW |
| Rds On (Max) @ Id, Vgs | 400 mOhm |
| Supplier Device Package | SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.6 V |
Pricing
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Description
General part information
DMC3400SDW Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources