Discrete Semiconductor Products

IRFU9024PBF

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MOSFET P-CH 60V 8.8A TO251AA

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Discrete Semiconductor Products

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MOSFET P-CH 60V 8.8A TO251AA

Technical Specifications

Parameters and characteristics for this part

Specification	IRFU9024PBF

Current - Continuous Drain (Id) @ 25°C	8.8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	570 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	42 W, 2.5 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division IRFU9024PBF	Through Hole	280 mOhm	8.8 A	20 V	MOSFET (Metal Oxide)	19 nC	IPAK TO-251-3 Short Leads TO-251AA	-55 °C	150 °C	570 pF	P-Channel	10 V	2.5 W 42 W	60 V	TO-251AA	4 V

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General part information

P-Channel 60 V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

Technical documentation and resources