Discrete Semiconductor Products

SIHG068N60EF-GE3

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MOSFET N-CH 600V 41A TO247AC

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Discrete Semiconductor Products

Active

MOSFET N-CH 600V 41A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG068N60EF-GE3

Current - Continuous Drain (Id) @ 25°C	41 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	77 nC
Input Capacitance (Ciss) (Max) @ Vds	2628 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	68 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIHG068N60EF-GE3	MOSFET (Metal Oxide)	77 nC	TO-247-3	-55 °C	150 °C	5 V	10 V	N-Channel	TO-247AC	250 W	41 A	30 V	2628 pF	Through Hole	68 mOhm	600 V

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General part information

N-Channel 600 V 41A (Tc) 250W (Tc) Through Hole TO-247AC

Technical documentation and resources