Discrete Semiconductor Products

AOCA32108E

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MOSFET 2N-CH 12V 25A 10DFN

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Discrete Semiconductor Products

Active

MOSFET 2N-CH 12V 25A 10DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AOCA32108E

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	12 V
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	10-SMD, No Lead
Power - Max	3.1 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	10-AlphaDFN (3.01x1.52)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max	Configuration	Vgs(th) (Max) @ Id	Supplier Device Package
Alpha & Omega Semiconductor Inc. AOCA32108E	10-SMD No Lead	3.8 mOhm	MOSFET (Metal Oxide)	25 A	150 °C	-55 °C	12 V	Surface Mount	32 nC	3.1 W	2 N-Channel (Dual) Common Drain	1.1 V	10-AlphaDFN (3.01x1.52)

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General part information

Mosfet Array 12V 25A (Ta) 3.1W (Ta) Surface Mount 10-AlphaDFN (3.01x1.52)

Technical documentation and resources