Discrete Semiconductor Products

SQ2360EES-T1-GE3

Obsolete

MOSFET N-CH 60V 4.4A TO236

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 4.4A TO236

Technical Specifications

Parameters and characteristics for this part

Specification	SQ2360EES-T1-GE3

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	370 pF
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs [Max]	85 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology
Vishay General Semiconductor - Diodes Division SQ2360EES-T1-GE3	60 V	370 pF	2.5 V	SC-59 SOT-23-3 TO-236-3	4.4 A	85 mOhm	Surface Mount	SOT-23-3 (TO-236)	12 nC	N-Channel	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 4.4A (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources