Discrete Semiconductor Products

IXFN260N17T

Obsolete

MOSFET N-CH 170V 245A SOT227B

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 170V 245A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN260N17T

Drain to Source Voltage (Vdss)	170 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	400 nC
Input Capacitance (Ciss) (Max) @ Vds	24000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	1090 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
IXYS IXFN260N17T	N-Channel	5 V	24000 pF	Chassis Mount	MOSFET (Metal Oxide)	10 V	SOT-227-4 miniBLOC	-55 °C	175 ░C	170 V	6.5 mOhm	20 V	SOT-227B	400 nC	1090 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 170 V 245A (Tc) 1090W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available