Discrete Semiconductor Products

MCB110N10Y-TP

LTB

N-CHANNEL MOSFET,D2-PAK

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Discrete Semiconductor Products

LTB

N-CHANNEL MOSFET,D2-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCB110N10Y-TP

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Input Capacitance (Ciss) (Max) @ Vds	4600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	260 W
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Vgs (Max)	Mounting Type	Power Dissipation (Max) [Max]
Micro Commercial Components MCB110P06Y-TP	3.5 V	P-Channel	-55 °C	150 °C	5810 pF	88 nC	8.4 mOhm	6 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	110 A	60 V	MOSFET (Metal Oxide)	D2PAK	18 V	Surface Mount
Micro Commercial Components MCB110N10Y-TP	4 V	N-Channel	-55 °C	150 °C	4600 pF	66 nC		10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	110 A	100 V	MOSFET (Metal Oxide)	D2PAK	20 V	Surface Mount	260 W

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General part information

N-Channel 100 V 110A (Tc) 260W Surface Mount D2PAK

Technical documentation and resources