Specification	SSM2212RZ-R7

Current - Collector (Ic) (Max) [Max]	20 mA
Current - Collector Cutoff (Max) [Max]	500 pA
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Supplier Device Package	8-SOIC
Transistor Type	2 NPN (Dual) Matched Pair
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

SSM2212 Series

Part	Mounting Type	Package / Case	Package / Case	Package / Case	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Transistor Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Analog Devices Inc./Maxim Integrated SSM2212RZ-R7	Surface Mount	0.154 in	8-SOIC	3.9 mm	200 mV	40 V	8-SOIC	2 NPN (Dual) Matched Pair	20 mA	150 °C	-65 °C	200 MHz	500 pA
Analog Devices Inc./Maxim Integrated SSM2212CPZ-R7	Surface Mount		16-WFQFN Exposed Pad CSP			40 V	16-LFCSP (3x3)	2 NPN (Dual)	20 mA	150 °C	-65 °C	200 MHz		300
Analog Devices Inc./Maxim Integrated SSM2212RZ	Surface Mount	0.154 in	8-SOIC	3.9 mm	200 mV	40 V	8-SOIC	2 NPN (Dual) Matched Pair	20 mA	150 °C	-65 °C	200 MHz	500 pA
Analog Devices Inc./Maxim Integrated SSM2212RZ-RL	Surface Mount	0.154 in	8-SOIC	3.9 mm	200 mV	40 V	8-SOIC	2 NPN (Dual) Matched Pair	20 mA	150 °C	-65 °C	200 MHz	500 pA
Analog Devices Inc./Maxim Integrated SSM2212CPZ-RL	Surface Mount		16-WFQFN Exposed Pad CSP			40 V	16-LFCSP (3x3)	2 NPN (Dual)	20 mA	150 °C	-65 °C	200 MHz		300

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1410	$ 10.04

Description

General part information

SSM2212 Series

The SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems.With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (hFEtypically exceeds 600 at IC= 1 mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers.Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOSof less than 10 μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high- order amplifier harmonic distortion.Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction.The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBEbetween transistor pairs, the low VOSof the SSM2212 does not need offset trimming in most circuit applications.The SSM2212 SOIC performance and characteristics are guaranteed over the extended temperature range of −40°C to +85°C.The SSM2212 is available in 8-lead SOIC and 16-lead LFCSP packages.

Documents

Technical documentation and resources

Package Drawing - 8-Lead SOIC

Package Drawing

SSM2212: Audio Dual Matched NPN Transistor Preliminary Data Sheet (Rev.C)

Data Sheet