Discrete Semiconductor Products

NTD4808N-35G

Obsolete

ON Semiconductor

MOSFET N-CH 30V 10A/63A IPAK

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Discrete Semiconductor Products

NTD4808N-35G

Obsolete

ON Semiconductor

MOSFET N-CH 30V 10A/63A IPAK

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTD4808N-35G

Current - Continuous Drain (Id) @ 25°C	63 A, 10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	11.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	1538 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	54.6 W, 1.4 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

NTD4809NH Series

Power MOSFET 25V 44A 10.9 mOhm Single N Channel DPAK

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Power Dissipation (Max)
ON Semiconductor NTD4808N-35G	13 nC	4.5 V	11.5 V	IPAK	N-Channel	2.5 V	1538 pF	TO-251-3 Stub Leads IPAK	8 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	Through Hole	1.4 W 54.6 W	20 V	10 A 63 A	30 V
ON Semiconductor NTD4810N-1G	11 nC	4.5 V	11.5 V	IPAK	N-Channel	2.5 V	1350 pF	IPAK TO-251-3 Short Leads TO-251AA		MOSFET (Metal Oxide)	-55 °C	175 ░C	Through Hole	1.4 W 50 W	20 V	9 A 54 A	30 V	10 mOhm
ON Semiconductor NTD4863NT4G				DPAK	N-Channel	2.5 V		DPAK (2 Leads + Tab) SC-63 TO-252-3	9.3 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	Surface Mount	1.27 W 36.6 W	20 V	9.2 A 49 A	25 V		990 pF	4.5 V 10 V	13.5 nC
ON Semiconductor NTD4815NH-1G		4.5 V	11.5 V	IPAK	N-Channel	2.5 V	845 pF	IPAK TO-251-3 Short Leads TO-251AA	15 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	Through Hole	1.26 W 32.6 W	20 V	6.9 A	30 V				6.8 nC	35 A
ON Semiconductor NTD4806NAT4G	23 nC			DPAK	N-Channel	2.5 V	2142 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	6 mOhm	MOSFET (Metal Oxide)			Surface Mount			11.3 A 79 A	30 V
ON Semiconductor NTD4804NA-35G		4.5 V	11.5 V	IPAK	N-Channel	2.5 V	4490 pF	TO-251-3 Stub Leads IPAK	4 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	Through Hole	1.43 W 93.75 W	20 V	14.5 A 124 A	30 V				40 nC
ON Semiconductor NTD4809NAT4G	13 nC	4.5 V	11.5 V	DPAK	N-Channel	2.5 V	1456 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	9 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	Surface Mount	1.3 W 52 W	20 V	9.6 A	30 V					58 A
ON Semiconductor NTD4806NA-1G	23 nC			IPAK	N-Channel	2.5 V	2142 pF	IPAK TO-251-3 Short Leads TO-251AA	6 mOhm	MOSFET (Metal Oxide)			Through Hole			11.3 A 79 A	30 V
ON Semiconductor NTD4809NH-1G	15 nC	4.5 V	11.5 V	IPAK	N-Channel	2.5 V	2155 pF	IPAK TO-251-3 Short Leads TO-251AA	9 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	Through Hole	1.3 W 52 W	20 V	9.6 A	30 V					58 A
ON Semiconductor NTD4804N-1G		4.5 V	11.5 V	IPAK	N-Channel	2.5 V	4490 pF	IPAK TO-251-3 Short Leads TO-251AA	4 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	Through Hole		20 V	14.5 A 124 A	30 V				40 nC		107 W	1.43 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NTD4809NH Series

Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK

Documents

Technical documentation and resources