Discrete Semiconductor Products

MCG20N04-TP

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MOSFET N-CH 40V 20A DFN3333-8

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Discrete Semiconductor Products

Active

MOSFET N-CH 40V 20A DFN3333-8

Technical Specifications

Parameters and characteristics for this part

Specification	MCG20N04-TP

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-VDFN Exposed Pad
Power Dissipation (Max)	21 W, 2.34 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	DFN3333
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs
Micro Commercial Components MCG20N04-TP	20 A	20 V	Surface Mount	N-Channel	2.5 V	MOSFET (Metal Oxide)	4.5 V 10 V	750 pF	2.34 W 21 W	8-VDFN Exposed Pad	40 V	-55 °C	150 °C	DFN3333	14 mOhm

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General part information

N-Channel 40 V 20A (Tc) 2.34W (Ta), 21W (Tc) Surface Mount DFN3333

Technical documentation and resources