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Technical Specifications
Parameters and characteristics for this part
| Specification | NSTB1003DXV5T1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA, 200 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100, 80 |
| Frequency - Transition | 250 MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOT-553 |
| Power - Max [Max] | 500 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47000 Ohms |
| Supplier Device Package | SOT-553 |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 250 mV, 400 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
| Voltage - Collector Emitter Breakdown (Max) [Min] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 6662 | $ 0.05 | |
Description
General part information
NSTB1003 Series
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA, 200mA 250MHz 500mW Surface Mount SOT-553
Documents
Technical documentation and resources
No documents available