Discrete Semiconductor Products

MUN5230DW1T1

Obsolete

TRANS 2NPN PREBIAS 0.25W SOT363

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS 2NPN PREBIAS 0.25W SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	MUN5230DW1T1

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	3 hFE
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	250 mW
Resistor - Base (R1)	1 kOhms
Resistor - Emitter Base (R2)	1 kOhm
Supplier Device Package	SC70-6, SC-88, SOT-363
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Resistor - Base (R1)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Emitter Base (R2)	Supplier Device Package
ON Semiconductor MUN5230T1G	202 mW	500 nA	100 mA	SC-70 SOT-323	1 kOhms	3 hFE	NPN - Pre-Biased	Surface Mount	250 mV	50 V	1 kOhm
ON Semiconductor MUN5230DW1T1	250 mW	500 nA	100 mA	6-TSSOP SC-88 SOT-363	1 kOhms	3 hFE	2 NPN - Pre-Biased (Dual)	Surface Mount	250 mV	50 V	1 kOhm	SC-88 SC70-6 SOT-363

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Technical documentation and resources