Discrete Semiconductor Products

VS-15ETU12-M3

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DIODE GEN PURP 1.2KV 15A TO220AC

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Discrete Semiconductor Products

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DIODE GEN PURP 1.2KV 15A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-15ETU12-M3

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	80 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	167 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	2.78 V

Part	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package
Vishay General Semiconductor - Diodes Division VS-15ETU12-M3	200 mA 500 ns	175 ░C	-55 °C	Through Hole	2.78 V	15 A	167 ns	1.2 kV	Standard	80 µA	TO-220-2	TO-220AC

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General part information

Diode 1200 V 15A Through Hole TO-220AC

Technical documentation and resources