Discrete Semiconductor Products

SIHS90N65E-E3

Obsolete

MOSFET N-CH 650V 87A SUPER247

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 87A SUPER247

Technical Specifications

Parameters and characteristics for this part

Specification	SIHS90N65E-E3

Current - Continuous Drain (Id) @ 25°C	87 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	591 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	625 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	SUPER-247™ (TO-274AA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	FET Type	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIHS90N65E-E3	TO-247-3	4 V	87 A	650 V	29 mOhm	591 nC	MOSFET (Metal Oxide)	N-Channel	625 W	Through Hole	10 V	30 V	-55 °C	150 °C	SUPER-247™ (TO-274AA)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 87A (Tc) 625W (Tc) Through Hole SUPER-247™ (TO-274AA)

Technical documentation and resources