Discrete Semiconductor Products

SI1563DH-T1-E3

Obsolete

MOSFET N/P-CH 20V 1.13A SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 20V 1.13A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1563DH-T1-E3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	880 mA, 1.13 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	2 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	570 mW
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Configuration	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Feature	Package / Case	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI1563EDH-T1-E3	20 V	N and P-Channel	1 V	1 nC	MOSFET (Metal Oxide)	SC-70-6	280 mOhm	570 mW	-55 °C	150 °C	Surface Mount	1.13 A 880 mA	Logic Level Gate	6-TSSOP SC-88 SOT-363
Vishay General Semiconductor - Diodes Division SI1563DH-T1-E3	20 V	N and P-Channel	1 V		MOSFET (Metal Oxide)	SC-70-6	280 mOhm	570 mW	-55 °C	150 °C	Surface Mount	1.13 A 880 mA	Logic Level Gate	6-TSSOP SC-88 SOT-363	2 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 1.13A, 880mA 570mW Surface Mount SC-70-6

Technical documentation and resources

No documents available