Discrete Semiconductor Products

PBLS6004D,115

Obsolete

TRANS PREBIAS 1NPN 1PNP 6-TSOP

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Discrete Semiconductor Products

Obsolete

TRANS PREBIAS 1NPN 1PNP 6-TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PBLS6004D,115

Current - Collector (Ic) (Max)	700 mA, 100 mA
Current - Collector Cutoff (Max)	100 nA
Current - Collector Cutoff (Max)	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 hFE, 150 hFE
Frequency - Transition	185 MHz
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Power - Max [Max]	600 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms
Supplier Device Package	6-TSOP
Transistor Type	1 NPN Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic	150 mV, 340 mV
Voltage - Collector Emitter Breakdown (Max)	50 V, 60 V

Part	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Package / Case	Resistor - Emitter Base (R2)	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max)	Current - Collector Cutoff (Max)	Current - Collector (Ic) (Max)	Resistor - Base (R1)	Supplier Device Package	Mounting Type	Transistor Type
Freescale Semiconductor - NXP PBLS6004D,115	185 MHz	150 mV 340 mV	600 mW	SC-74 SOT-457	22 kOhms	50 V 60 V	60 hFE 150 hFE	100 nA	1 µA	100 mA 700 mA	22 kOhms	6-TSOP	Surface Mount	1 NPN Pre-Biased 1 PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 60V 100mA, 700mA 185MHz 600mW Surface Mount 6-TSOP

Technical documentation and resources