Discrete Semiconductor Products
TK5A80E,S4X
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 800 V, 2.4 Ω@10V, TO-220SIS, Π-MOSⅧ
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
TK5A80E,S4X
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 800 V, 2.4 Ω@10V, TO-220SIS, Π-MOSⅧ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TK5A80E,S4X |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 20 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) @ Id, Vgs | 2.4 Ohm |
| Supplier Device Package | TO-220SIS |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id [Max] | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 53 | $ 2.25 | |
| Tube | 1 | $ 1.93 | ||
| 10 | $ 1.23 | |||
| 100 | $ 0.83 | |||
| 500 | $ 0.66 | |||
| 1000 | $ 0.61 | |||
| 2000 | $ 0.56 | |||
| 5000 | $ 0.52 | |||
Description
General part information
TK5A80E Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 800 V, 2.4 Ω@10V, TO-220SIS, π-MOSⅧ
Documents
Technical documentation and resources