Specification	SSM3K35AMFV,L3F

Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.34 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	36 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-723
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	VESM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

SSM3K35AMFV Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.25 A, 1.1 Ω@4.5V, SOT-723(VESM)

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature
Toshiba Semiconductor and Storage SSM3K35AMFV,L3F	0.34 nC	36 pF	N-Channel	500 mW	1.1 Ohm	SOT-723	10 V	MOSFET (Metal Oxide)	20 V	1.2 V	4.5 V	Surface Mount	VESM	250 mA	1 V	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	98646	$ 0.17

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.25 A, 1.1 Ω@4.5V, SOT-723(VESM)

Technical documentation and resources