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PBSS5240T-QR
Discrete Semiconductor Products

PBSS5240T-QR

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Nexperia USA Inc.

TRANSISTOR GP BJT PNP 40V 2A 3-PIN SOT-23 T/R

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PBSS5240T-QR
Discrete Semiconductor Products

PBSS5240T-QR

Active
Nexperia USA Inc.

TRANSISTOR GP BJT PNP 40V 2A 3-PIN SOT-23 T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS5240T-QR
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]300
Frequency - Transition200 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
QualificationAEC-Q101
Supplier Device PackageTO-236AB
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic350 mV
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.13

Description

General part information

PBSS5240T-Q Series

PNP low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.