Discrete Semiconductor Products
PXN012-100QSJ
ActiveNexperia USA Inc.
N-CHANNEL 100 V, 12 MOHM, STANDARD LEVEL TRENCH MOSFET IN MLPAK33
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Search across all available documentation for this part.
Discrete Semiconductor Products
PXN012-100QSJ
ActiveNexperia USA Inc.
N-CHANNEL 100 V, 12 MOHM, STANDARD LEVEL TRENCH MOSFET IN MLPAK33
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PXN012-100QSJ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) [Max] | 58 W |
| Supplier Device Package | MLPAK33 |
| Technology | MOSFET (Metal Oxide) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1118 | $ 1.13 | |
Description
General part information
PXN012-100QS Series
General purpose MOSFET for standard applications, 50 A, standard level N-channel enhancement mode Power MOSFET in MLPAK33 package.
Documents
Technical documentation and resources