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SOT223
Discrete Semiconductor Products

PMT200EPEX

Active
Nexperia USA Inc.

TRANS MOSFET P-CH -70V -2.4A 167MOHM 4-PIN(3+TAB) SOT-223 T/R

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Documentsplastic, surface-mounted package with increased heatsink; 4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm bodyplastic, surface-mounted package with increased heatsink; 4 leads; 4.6 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body+6
SOT223
Discrete Semiconductor Products

PMT200EPEX

Active
Nexperia USA Inc.

TRANS MOSFET P-CH -70V -2.4A 167MOHM 4-PIN(3+TAB) SOT-223 T/R

Deep-Dive with AI

Documentsplastic, surface-mounted package with increased heatsink; 4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm bodyplastic, surface-mounted package with increased heatsink; 4 leads; 4.6 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body+6

Technical Specifications

Parameters and characteristics for this part

SpecificationPMT200EPEX
Current - Continuous Drain (Id) @ 25°C2.4 A
Drain to Source Voltage (Vdss)70 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]15.9 nC
Input Capacitance (Ciss) (Max) @ Vds822 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Rds On (Max) @ Id, Vgs167 mOhm
Supplier Device PackageSOT-223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 420$ 0.27
500$ 0.22
DigikeyN/A 2353$ 0.98

Description

General part information

PMT200EPE Series

P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.