Discrete Semiconductor Products

3A60H

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DIODE GEN PURP 600V 3A DO204AC

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Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 3A DO204AC

Technical Specifications

Parameters and characteristics for this part

Specification	3A60H

Capacitance @ Vr, F	27 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-15, Axial, DO-204AC
Qualification	AEC-Q101
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-204AC (DO-15)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V

Part	Capacitance @ Vr, F	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Speed [Min]	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Grade	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)
Taiwan Semiconductor Corporation 3A60H	27 pF	Standard	600 V	AEC-Q101	200 mA 500 ns	Axial DO-15 DO-204AC	-55 °C	150 °C	DO-204AC (DO-15)	Automotive	5 µA	Through Hole	1.1 V	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 3A Through Hole DO-204AC (DO-15)

Technical documentation and resources