Discrete Semiconductor Products

2SC1008-Y-AP

Obsolete

TRANS NPN 60V 0.7A TO-92

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Discrete Semiconductor Products

Obsolete

TRANS NPN 60V 0.7A TO-92

Technical Specifications

Parameters and characteristics for this part

Specification	2SC1008-Y-AP

Current - Collector (Ic) (Max) [Max]	700 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	800 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]	Transistor Type	Supplier Device Package	Mounting Type
MCC (Micro Commercial Components) 2SC1008-Y-AP	400 mV	120	60 V	100 nA	30 MHz	700 mA	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	800 mW	NPN	TO-92	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Bipolar (BJT) Transistor NPN 60 V 700 mA 30MHz 800 mW Through Hole TO-92

Technical documentation and resources