Discrete Semiconductor Products

IPS70R600CEAKMA1

Unknown

MOSFET N-CH 700V 10.5A TO251-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Unknown

MOSFET N-CH 700V 10.5A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPS70R600CEAKMA1

Current - Continuous Drain (Id) @ 25°C	10.5 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	474 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	86 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	PG-TO251-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type
INFINEON IPS70R600CEAKMA1	PG-TO251-3-11	3.5 V	22 nC	600 mOhm	700 V	MOSFET (Metal Oxide)	10 V	20 V	-40 °C	150 °C	TO-251-3 Stub Leads IPAK	474 pF	N-Channel	10.5 A	86 W	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 700 V 10.5A (Tc) 86W (Tc) Through Hole PG-TO251-3-11

Technical documentation and resources