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PBSS5330PAS-QX
Discrete Semiconductor Products

PBSS5330PAS-QX

Active
Nexperia USA Inc.

30 V, 3 A PNP LOW VCESAT TRANSISTOR

PBSS5330PAS-QX
Discrete Semiconductor Products

PBSS5330PAS-QX

Active
Nexperia USA Inc.

30 V, 3 A PNP LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS5330PAS-QX
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce200
Frequency - Transition165 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / Case3-UDFN Exposed Pad
Power - Max [Max]0.6 W
QualificationAEC-Q101
Supplier Device PackageDFN2020D-3
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic320 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.20

Description

General part information

PBSS5330PAS-Q Series

PNP low VCEsattransistor, encapsulated in an DFN2020D-3 (SOT1061D) ultra thin leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.