
Discrete Semiconductor Products
PBSS5330PAS-QX
ActiveNexperia USA Inc.
30 V, 3 A PNP LOW VCESAT TRANSISTOR
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Discrete Semiconductor Products
PBSS5330PAS-QX
ActiveNexperia USA Inc.
30 V, 3 A PNP LOW VCESAT TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS5330PAS-QX |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 |
| Frequency - Transition | 165 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 3-UDFN Exposed Pad |
| Power - Max [Max] | 0.6 W |
| Qualification | AEC-Q101 |
| Supplier Device Package | DFN2020D-3 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 320 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.20 | |
Description
General part information
PBSS5330PAS-Q Series
PNP low VCEsattransistor, encapsulated in an DFN2020D-3 (SOT1061D) ultra thin leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.
Documents
Technical documentation and resources