Discrete Semiconductor Products

IRFS3307ZTRRPBF

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MOSFET N-CH 75V 120A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 75V 120A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS3307ZTRRPBF

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	230 W
Rds On (Max) @ Id, Vgs [Max]	5.8 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
INFINEON IRFS3307ZTRRPBF	230 W	5.8 mOhm	120 A	4 V	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4750 pF	Surface Mount	10 V	MOSFET (Metal Oxide)	TO-263 (D2PAK)	N-Channel	175 °C	-55 °C	110 nC	75 V
INFINEON IRFS3307TRLPBF	200 W		120 A	4 V	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5150 pF	Surface Mount	10 V	MOSFET (Metal Oxide)	D2PAK	N-Channel	175 °C	-55 °C	180 nC	75 V	6.3 mOhm
INFINEON IRFS3307ZTRLPBF	230 W	5.8 mOhm	120 A	4 V	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4750 pF	Surface Mount	10 V	MOSFET (Metal Oxide)	D2PAK	N-Channel	175 °C	-55 °C	110 nC	75 V

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